Zoom: In the Meeting Invite
In-Person: Michigan Memorial Phoenix Project, 2301 Bonisteel Blvd, Ann Arbor, MI 48109, USA, PML 2000
Abstract:
Group III-nitride semiconductors have enabled a broad range of applications from solid-state
lighting to high-power electronics. Alloying III-nitrides with rare-earth elements such as Sc, Y,
and La offers new pathways to tailor their fundamental optical and electronic properties, with
substantial enhancements in piezoelectricity, ferroelectricity, and second-order optical
nonlinearity (χ (2) ). These emerging materials offer a multifunctional platform for integrated
quantum photonics and advanced electronics.
In this talk, I will discuss the molecular beam epitaxy (MBE) growth and comprehensive
characterization of several rare-earth-alloyed III-nitrides, focusing on the effects of alloying on
second-order optical nonlinearity and its role in enabling ferroelectric polarization switching. I
will then discuss the opportunities to develop new device concepts for both photonic and
electronic applications through heterostructure engineering. Specifically, I will present an ultra-
low-loss hybrid ScAlN/SiNₓ integrated photonic platform for quantum photonics, followed by
electronic device demonstrations in which ferroelectric ScAlN barriers are integrated into
conventional high-electron-mobility transistors (HEMTs). These devices achieve record-low
sheet resistance, fast operation speed, and exceptional thermal stability.
Bio:
Jiangnan Liu is a postdoctoral research fellow at the University of Michigan, where he also
earned his Ph.D. in Electrical and Computer Engineering. His research focuses on the molecular
beam epitaxy (MBE) growth and device integration of emerging ferroelectric III-nitride
semiconductors for the next-generation photonic and electronic applications.
